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HDP Etcher
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Features
1. Plasma source with high density ion and uniformity
2. Low pressure and high density plasma > high etch rate.
3. Easy control of by-product reactions
4. Independent control of ion energy, density, selectivity and profile >
Multi band process window
5. Electrostatic chuck > Uniform etch rate and profile
6. Cluster type
Applications
1. Gate Mo, MoW // a-Si Etch
2. Pixel electrode ITO//SiNx Etch
3. SD Ti/Al/Ti // a-Si, MoN/Al/MoN//a-Si Etch
4. SiO2 /SiNx via hole etching
5. N or P ion doped PR Full Ashing
6. PR Full Ashing
7. Half tone Mask Ashing |
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| 公司名稱 |
Innovation for Creative Devices Co.,Ltd.(ICD)
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| 地址
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321-1, Sonae-Ri, Daedeok-Myeon, Anseong-Si, Gyeonggi-Do,Korea
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| 郵政編碼 |
456-833
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| 電話 |
82-31-6783333
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| 傳真 |
82-31-6783301
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| 移動電話 |
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| 電子郵箱 |
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| 網站 |
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| 聯絡人 |
Tae-Yeon Kim / Assistant Manager
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詢盤籃
幫助
ace_suppliers@hotmail.com 
604292613