Provides 65nm process solution for complete PR stripping with high throughput -Plasama Source;Remote Plasma Source -Ashing Rate; > 100,000 Å / min -Uniformity; Within W & WTW ≤ 5% -Partide; Particle < 20EA (0.09μm ) -Damage; Fluorine-free -Process Gas; Chemical Etching ~ O2, CF4, N2
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