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OmniEtch
OmniEtch bare die de-layering system uses etch chemicals that are
both adsorbed and absorbed onto the surface of a proprietary
Carrier Medium (designation 36-6).

Controlled chemical etching for de-layering of IC die has never been
possible due to etch chemicals leaking through vias from one metal
layer to another, causing cross contamination and etching of
successive die layers. Until now it has only been possible to remove
surface passivation layers to expose the uppermost metal layer. This
metal layer can be removed by manual chemical etching, but
invariably chemicals leak and diffuse through the interconnect vias to
contaminate lower layers in the die stack.
To overcome this problem the process of backside emission
microscopy was developed. Backside emission microscopy itself is
a very demanding methodology, due to the difficulties of preparing
suitable thinned and polished die, while avoiding mechanical and
thermal damage to the samples.

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