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OmniEtch
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OmniEtch bare die de-layering system uses etch chemicals that are both adsorbed and absorbed onto the surface of a proprietary Carrier Medium (designation 36-6).
Controlled chemical etching for de-layering of IC die has never been possible due to etch chemicals leaking through vias from one metal layer to another, causing cross contamination and etching of successive die layers. Until now it has only been possible to remove surface passivation layers to expose the uppermost metal layer. This metal layer can be removed by manual chemical etching, but invariably chemicals leak and diffuse through the interconnect vias to contaminate lower layers in the die stack. To overcome this problem the process of backside emission microscopy was developed. Backside emission microscopy itself is a very demanding methodology, due to the difficulties of preparing suitable thinned and polished die, while avoiding mechanical and thermal damage to the samples.
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| 公司名稱 |
Nisene Technology Group Inc
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| 地址
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300 Westridge Dr.,Watsonville,CA,VIRGINIS.(US)
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| 郵政編碼 |
95076
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| 電話 |
831-7617980
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| 傳真 |
831-7612992
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